| 摘要 |
<p>PURPOSE: To realize a semiconductor nonvolatile memory capable of remarkably improving drain disturbance at a data write time and improving a disturbance margin. CONSTITUTION: In a DINOR type flash memory, a prescribed negative voltage -10V is applied to a selected word line, and a prescribed positive voltage 6V is applied to a selected bit line, and the prescribed negative voltage -3V is applied to a substrate of a write objective memory cell, and the prescribed positive voltage 2V is applied to a non-selection word line. Thus, a charge is pulled out from the floating gate of the selected memory cell by FN tunneling through a drain, and a threshold value is transited to the required threshold value, and write operation is performed.</p> |
