| 摘要 |
PURPOSE: To obtain a semiconductor which shows a lower rising voltage for electrodes and allows use of current injection type electrodes by adding nitrogen and hydrogen into a II-VI group compound semiconductor and preferably defining contents of nitrogen and hydrogen in the film and mol concentration ratio of nitrogen and hydrogen. CONSTITUTION: Nitrogen and hydrogen are added into a II-Vl group compound semiconductor. Here, it is preferable that nitrogen and hydrogen are included in amount of 1×10<17> cm<-3> or more in the film and mol concentration ratio of nitrogen and hydrogen is set to 2/1 or more. As the II group elements, Zn, Mg, Mn are desirable and as the VI group elements, S, Se are preferable. In this case, the manufacturing method includes the steps for loading a GaAs substrate 23a to a substrate holder 23b within a vacuum vessel 21, evacuating the vessel up to the super-vacuum condition such as about 10<-9> Torr and removing an oxide film at the substrate surface while it is kept at 580 deg.C for 10 minutes. Thereafter, the substrate 23a is lowered up to 300 deg.C to obtain p type ZnSe film through irradiation with Zn molecule beam, Se molecule beam, active nitrogen molecule beam and active hydrogen molecule beam to the substrate surface. |
