| 摘要 |
PURPOSE: To downsize an IGBT module and reduce the cost by integrating a MOSFET, used in overcurrent protective circuit for improving the short circuit resistance of IGBT, and a Schottky diode into one chip. CONSTITUTION: An n-layer 1, 0.1-10Ω-cm in resistivity and a drain electrode 7 consisting of an Al film 9 are brought into a Schottky junction 18, in a vertical MOSFET.
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