| 摘要 |
PURPOSE: To materialize an SOI substrate where a silicon layer which has an equal thickness with small TTV and has small surface roughness is provided on an insulating substrate. CONSTITUTION: A p<+> -type Si layer 2 doped with B is made on an Si substrate 1, and the surface is polished, and then an Si buffer layer 3, an Si1-x Gex layer 4, and an Si active layer 5 are made in order thereon. Next, the surface of the Si active layer 5 is polished, and thereon An SiO2 film 6 is formed, and then one main face of another Si substrate 7 is stuck together onto it. Next, the Si substrate 1 is polished to be thin from the rear side, and then the remaining Si substrate 1, the P<+> -type Si layer 2, and the Si buffer layer 3 are retched off in order severally with its base layer as an etching stop layer. Next, the Si1-x Gex Layer 4 is removed by polishing or etching to expose the surface of the Si active layer 5. In case of etching off the Si1-x Gex layer 4, the surface of the Si active layer 5 is polished.
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