| 摘要 |
<p>PURPOSE: To provide a rectifier diode which has improved diode characteristics (reverse voltage, forward voltage, backward recovery time, peak inverse voltage, soft recovery, etc.). CONSTITUTION: A silicon rectifier diode has such a srtructure that rectifier PN junctions which are made by forming a plurality P regions (3-1 to 3-3) of P-type conductivity which have a depth Xp from the surface of a high resistance 'i' layer 2 of N-type conductivity and Schottky barrier junctions are alternately arranged and a high resistance 'i' layer 2 of a thickness Wi in the depth direction is located adjacent to the P regions (3-1 to 3-3) and a low resistance N+ layer 1 is located adjacent to the high resistance 'i' layer 2. In a region where the high resistance 'i' layer 2 abuts on the low resisttance N+ layer 1, a buffer layer 4 is formed. In the high resistance 'i' layer 2, the carrier life time is shortest in a region of a depth Xp including the PN junctions and becomes longer towards the low resistance N+ region 1 which is apart from the PN junctions.</p> |
