| 摘要 |
PURPOSE: To reduce the number of processing steps while keeping the performance of an optical element by terminating an optical guide layer in the surface side between an active region and a light outgoing and incoming end face, terminating an optical guide layer in the substrate side at the light outgoing and incoming end face of an element and simultaneously forming current element layers at both side surfaces of mesa stripe and the outermost surface layer at the spot size converting region. CONSTITUTION: An active region 30 in the mesa stripe is formed by a stacking structure including optical guide layers 3, 5 and the spot size converting regions 31, 32 is formed by a stacking structure including an optical guide layer 5 and a couple of half-insulating semiconductor layer 10, 11. Here, in the spot size converting regions 31, 32 of the mesa stripe, an optical guide layer 5 in the side of the active layer 7 is terminated between the active region 30 and light outgoing and incoming end face of an optical element and an optical guide layer 3 in the side of the outer most substrate 1 is terminated at the light outgoing and incoming end face of the optical element. A second half-insulating semiconductor layer 11 forming the outer most surface of the spot size converting regions 31, 32 in the mesa stripe has the same composition as the half-insulating semiconductor layer 10 forming current rejection layers at both side surfaces of the mesa stripe. |
