THIN-FILM TRANSISTOR AND MANUFACTURE OF SEMICONDUCTOR FILM

摘要

PURPOSE: To form a semiconductor film which has a high mobility with high throughput. CONSTITUTION: A part of a semiconductor layer 104 of a TFT which is between the surface of an insulating film 103 and a depth of 500Åfrom the surface of the insulating film 103 includes many crystal grains which have a 111} orientation to a face of a substrate 101 or a microcrystal phase which has an absorption coefficient 3.7×10<5> cm<-1> or smaller for light of wave length 400nm. Thisμc-Si film is formed by repeating formation of a-Si films and hydrogen plasma processing. It can be formed also by depositing an Si film at a hydrogen dilution ratio 2-100 on an Si film which has been formed at the hydrogen dilution ratio 200 or over.