SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE

摘要

PURPOSE: To emit a pure green light by providing a specific layer which is in contact with specific light emitting layer and light reception layer for emitting light and injects carriers to the light emitting layer. CONSTITUTION: Semiocnductor light emitting element is provided with a light emitting layer of ZnSx Sey Te(1-x-y) (x+y<1, y>=0) and ZnSz Se(1-z) layer (z>=0) for injecting carriers to the light emitting layer. Si addition n-type GaAs 11 is used as a substrate to grow iodine-addition n-type ZnSz Se(1-z) (z=0.08) layer 12. Au n-side electrode 14 is formed on n-side electrode 15 and p-type crystal layer 13 of Au-Ge on the reverse side of the GaAs substrate 11. Electrons are injected from the n-types SnSSe layer 12 to the ZnSeTe layer 13 and the layer 13 is used as a light emitting layer, thus obtaining the spectrum of green emission with an area around 517nm equivalent to the band gap of the ZnSeTe layer 13 as an emission peak.