MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a production method for a semiconductor device capable of electrically connecting an internal semiconductor element to an external electrical circuit accurately and reliably. CONSTITUTION: A process for adhering a first metal layer 8 consisting of silver or palladium to the surface of a metalized wiring layer 4 of an insulating substrate 1 and a process of adhering a second plating metal layer 9 consisting of tin-lead on the surface of an external lead terminal 2 are adopted and the metalized wiring layer 4 of the insulating substrate 1 and external lead terminal 2 are contacted together and heated. And a first plated metal layer 8 adhered to the surface of the metalized wiring layer 4 of the insulating substrate 1 and a second plated metal layer 9 adhered to the surface of the external lead terminals 2 are mutually diffused, a tin-leadsilver alloy or a tin-lead-palladium alloy is formed, and the metalized wiring layer 4 and the external lead terminal 2 are jointed together through a tin-lead-silver alloy or a tin-leadpalladium alloy in one of the processes for manufacturing the semiconductor devices.