| 摘要 |
PURPOSE: To reduce the capacitance and ON resistance between electrodes by forming the metal thin film of the electrodes with an extremely thin film and forming the metal thin film of a transmission line with a thick thin film. CONSTITUTION: Transmission lines 15A and 15B of Au thin film are thickly formed on a semi-insulating substrate 10 of InP substrate where Fe which is, for example, approximately 1×2mm square is doped and electrodes 16A and 16B are formed to be extremely thin near the center. The transmission line is set to approximately 10μm thick and the electrode is set to 0.1μm or less thick, which are 1/5 or less of the conventional thickness. Therefore, the surface area of the opposing electrode is reduced to 1/5 or less, thus reducing the capacity to approximately 1/5 or less. Since the thickness of the electrode is reduced to 1/5, the gap width of the electrode is reduced to approximately 1/5 and the ON resistance during ON can also be reduced.
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