| 摘要 |
PURPOSE: To stabilize the operation of the memory cell of an SRAM and to miniaturize the memory cell. CONSTITUTION: MOS transistors Qt1 and Qt2 for transfer are formed by a normal LDD transistor but MOS transistors Qd1 and Qd2 for drive are formed by an LDD transistor with a large gate overlapping. The gate overlapping indicates that a low-concentration source/drain region and a gate electrode overlap. However, the amount of overlap matters. The overlapping of the MOS transistors Qd1 and Qd2 for drive is larger than that of the MOS transistors Qt1 and Qt2 for transfer. |
