| 摘要 |
<p>PURPOSE: To provide a method for manufacturing a thin-film semiconductor device wherein photolithography is conducted less number of times and provide a low-cost thin-film semiconductor device which is manufactured by such a method. CONSTITUTION: In a thin-film semiconductor device which has a nonsingle-crystal silicon film which is formed on an insulating substrate 1 and which includes at least an operating layer 2 and a source and a drain region 3, a gate insulating film 4 which is formed on the nonsingle-crystal silicon film, and a gate electrode film 5 which is formed on the operating layer 2 through the gate insulating film 4, the element region is flat and ring-shaped.</p> |
