| 摘要 |
<p>PURPOSE: To obtain a thin film transistor substrate produced with a small number of production processes and high production yield and excellent in display quality by always using a metal for the interface of a part where an image signal electrode and a protective film are contact with each other. CONSTITUTION: The substrate has such a structure that the interface between a transparent electrode ITO1 and a protective film PSV1 should be made of a metal (for example, a molybdenum alloy) and that the image signal wire DL is a laminar structure of a molybdenum alloy and the transparent electrode ITO1. By processing the insulating film in contact with a semiconductor layer into the same pattern as that of the semiconductor layer, a photolithographic process can be omitted. Thus, the TFT substrate is produced in four photolithographic processes. Since the semiconductor layer is patterned along a drain electrode SD2, a step under the drain wiring is decreased. Since the laminated films of molybdenum alloy and ITO is used, the drain wirings are hardly cut and the wirings are formed to have low resistance.</p> |
