| 摘要 |
<p>PURPOSE: To obtain the circuit with high reliability in which a gate oxide film is not destroyed by connecting a load element, a one conduction type of a 1st MOS transistor(TR) and reverse conduction type of 2nd and 3rd MOS TRs in series between a power supply and ground in this order and introducing a logical output from a connecting point between the 1st and 2nd MOS TRs. CONSTITUTION: A resistive element R11 acting like a load element L11 , a P channel MOS TR P12 receiving a voltage VMP close to a voltage VPP/2 at its gate, an N channel MOS TR N12 whose gate receives a voltage VMN close to VPP/2 and an N channel MOS TR N11 whose gate receives an input signal IN1 are connected in series between a high voltage power supply terminal VPP and a GND. Then the inverse of output signal OUT11 is extracted from the connecting point between the MOS TRs P12 , N12 . Thus, a high voltage is controlled by the input signal IN11 deflected between the VDD and GND to obtain the inverse of output signal OUT11 .</p> |
