发明名称 MEASURING METHOD FOR CONCENTRATION IN SPECIAL MATERIAL GAS COMPONENT FOR SEMICONDUCTOR AND SEMICONDUCTOR MANUFACTURING DEVICE
摘要 <p>PURPOSE: To provide a measuring method in concentration of special material gas component for a semiconductor and a semiconductor manufacturing device which can be incorporated in a gas piping system of a semiconductor manufacturing device in-line and with which, with no erroneous connection, gas component and concentration flowing in a gas piping or filled in a gas piping system can be measured. CONSTITUTION: In the middle of a gas pipe path 5 between a gas cylinder 2 containing special material gas for a semiconductor and a semiconductor manufacturing part, a gas detector 3 is assigned in-line for measurement of gas component and concentration. The gas detector 3 may be assigned at a combined pipe path of the pipe path connected to multiple gas cylinders.</p>
申请公布号 JPH08145884(A) 申请公布日期 1996.06.07
申请号 JP19940312440 申请日期 1994.11.21
申请人 MITSUBISHI CORP;HORIBA LTD;STEC KK 发明人 HARADA MICHIYUKI;UNO TOSHIHIKO;AKIYAMA SHIGEYUKI;SHIMIZU TETSUO
分类号 G01N21/33;G01N21/35;G01N21/3504;(IPC1-7):G01N21/35 主分类号 G01N21/33
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