| 摘要 |
<p>PURPOSE: To easily manufacture a film transistor provided with favorable operation property with high throughput by effectively implanting impurity ions effectively in a short time into a source region and a drain region requiring resistance down, without impurity ions being implanted wastefully into a channel region through a gate electrode. CONSTITUTION: Impurities are implanted, with its acceleration controlled so that the profile peak of its distribution may be positioned within the range of the depth of an active layer 2, using B ions as impurity ions. In this example, it is controlled so that the profile peak may be in the position of about 130nm (130nmf±10%) being measured from the surface of a gate oxide film 3, in short, about 30(30nm±10%)nm in depth from the topside of the active layer. The energy of the impurity ions is 40-80keV.</p> |
