| 摘要 |
PURPOSE: To reduce loss by eliminating mismatching at the interface between an ntype semiconductor and a p-type semiconductor when a solar cell is constituted using oxide semiconductor. CONSTITUTION: An ITO thin-film electrode 3 for generating Schottky barrier is successively formed among n-SrTiO3 layer 1, In2 O3 middle layer 2, and In2 O3 middle layer 2. |
