SEMICONDUCTOR THERMAL TREATMENT JIG AND ITS SURFACE TREATMENT METHOD

摘要

PURPOSE: To provide a semiconductor thermal treatment jig and its surface treatment method which can prevent fixing to a silicon single crystalline wafer, to restrain outward diffusion of impurities from a jig fully and readily and to prevent generation of pit-like defective during hydrogen annealing. CONSTITUTION: A silicon nitride film 12b is thermally formed in an outermost surface of a semiconductor thermal treatment jig 12 consisting of silicon or silicon carbide under nitrogen atmosphere. The silicon nitride film 12b is thermally formed in a temperature range of 1100 to 1300 deg.C in nitrogen atmosphere. It is desirable to remove a jig surface slightly by hydrogen etching, for example, before the silicon nitride film 12b is formed. Furthermore, the silicon nitride film 12b can be thermally grown after thermally forming a silicon oxide film in a jig surface in oxygen atmosphere after etching.