| 摘要 |
PURPOSE: To realize a compact, lightweight semiconductor having a high radiation hardening ability by providing a heater circuit inside a substrate and by forming a package material for semiconductor device with a tungsten alloy or a ceramic material. CONSTITUTION: A semiconductor 1 and electronic parts are mounted on a multi- layer substrate 3 with a built-in heater inside a radiation shielding device covered with a tungsten alloy package 7 and a tungsten alloy package cover 11 sealed with solder 10. Specially, a heater circuit 4 is provided inside the multi- layer substrate 3 with a built-in heater. Also, the package material of the semiconductor device is made of a tungsten alloy. In this way, a device for removing the influence of the radiation is added to the inside of the circuit substrate 3, thereby permitting a configuration of a compact, lightweight semiconductor device. Also, the inside of the semiconductor is activated and an electric charge generated during irradiation is decreased, thereby permitting great enhancement in radiation hardening ability. |
