| 摘要 |
PURPOSE: To realize an ion non-sensitive electrode capable of small-sizing and solidifying and also lowering the cost. CONSTITUTION: Constituted are of a base 21, a metal sintered film 22 formed on the base 21, electric field effect transistor 23 whereat a gate 23G is connected with the metal sintered film 22, ion non-sensitive film 24 covering the surface of the metal sintered film 22 and a resin 25 covering the metal sintered film and the electric field effect transistor 23 so as to expose the ion non-sensitive film 24. |
