| 摘要 |
PURPOSE: To form a contact on a source/drain region and a gate electrode without etching as far as a lower layer of a gate electrode when a contact hole is formed by making a silicide layer on a gate electrode thicker than a silicide layer on a source/drain region. CONSTITUTION: The title device has a semiconductor substrate 1, source/drain regions 14a, 14b formed on one main surface of the semiconductor substrate 1, a gate insulation layer 3 and a gate electrode 5 consisting of a silicon layer formed on the insulation layer 3. It also has a first silicide layer formed on the source/drain regions 14a, 14b and a second silicide layer which is thicker than the first silicide layer formed on the gate electrode 5. It further has an insulation layer 20 which is formed in an upper part of at least first and second silicide layers and is flattened by CMP method and contacts 18a, 18b, 17 buried in the insulation layer 20 in contact with the first and second silicide layers. |
