| 摘要 |
PURPOSE: To carry out operations at high speed without thermal damages by placing the well structure of a multiple quantum having the characteristics of electro-optical absorption in an intermediate layer between a semiconductor layer and a Schottky metallic film and composing a diode of a metallic layer/a multiple quantum layer/the semiconductor layer. CONSTITUTION: Multiple quantum well structure is formed of the quantum barrier layer 6 of gallium arsenide and the quantum-well layer 7 of indium gallium arsenide in an intrinsic region. A buffer layer 8 of gallium arsenide which is not doped is formed onto the multiple quantum-well structure in a constant thickness (Lb1), and a metallic layer 9 is formed onto the buffer layer 8 for a Schottky electrode layer and a mirror layer. A metallic film layer is jointed directly to a Schottky-diode intermediate layer, a metallic layer also having superior thermal conductivity is stuck fast to the intermediate layer in the trouble of the performance deterioration of the element, due to a photocurrent organic partial temperature rise generated from large input light required for the operation of the optical element at high speed, and thermal damages are resolved, and element performance level is brought close to its limit, thus obtaining operation at high speed. |
