A PROCESS FOR IN-SITU DEPOSITION OF A Ti/TiN BARRIER METAL STACK

摘要

A single chamber of a vapor deposition system is used to deposit both Ti and TiN. A Ti layer is deposited on the sample using a noncollimated process. N2 gas in then introduced in the chamber. A TiN layer is then deposited over the Ti layer, and afterwards, the chamber is evacuated. This process requires one less handling step that the conventional process, thereby increasing throughput. Further, Ti pasting of a TiN chamber is eliminated, thereby further increasing throughput. Still further, an Al layer deposited on the TiN layer produced by the present process can have impoved texture and grain size relative to an Al layer deposited on the TiN layer of the conventional process.