发明名称 CONDUCTIVE PLANE BENEATH SUSPENDED MICROSTRUCTURE
摘要 <p>A method and apparatus for providing a conductive plane (40) beneath a suspended microstructure. A conductive region is diffused into a substrate. A dielectric layer is added, covering the substrate, and then removed from a portion of the conductive region. A spacer layer is deposited over the dielectric and exposed conductive region. A polysilicon layer is deposited over the spacer layer, and formed into the shape of the suspended microstructure. After removal of the spacer layer, the suspended microstructure is left free to move above an exposed conductive plane (40). The conductive plane is driven to the same potential as the microstructure.</p>
申请公布号 WO1996017256(A1) 申请公布日期 1996.06.06
申请号 US1995015286 申请日期 1995.11.29
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