| 摘要 |
A bidirectional semiconductor switching device includes a semiconductor substrate having first and second device terminals on opposite faces thereof, a thyristor in the substrate for providing regenerative conduction in a first direction, between the first device terminal and the second device terminal, and an insulated-gate bipolar junction transistor (IGBT) in the substrate for providing nonregenerative conduction in a second opposite direction, between the second device terminal and the first device terminal. In particular, the switching device includes first and second adjacent trenches therein at a face and respective first and second insulated-gate field effect transistors (IGFETs) in the trenches for providing gate-controlled turn-on and turn-off of the thyristor and the IGBT, by being electrically connected in series therewith. |
