| 摘要 |
<p>A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises handle wafer (22), oxide layer (32) on one surface of handle wafer (22), device layer (36) bonded to oxide layer (32), and p+ etch-stop layer (34) on device layer (36) having an exposed face. The process comprises masking the exposed face of p+ etch-stop layer (34), and abrading the periphery of the BESOI wafer to remove edge margins of the p+ etch-stop layer (34) and device layer (36).</p> |
