Prepn. of an integrated optical semiconductor circuit, with an optical device such as an optical intensifier and a waveguide, involves (a) growing optical device-forming layers on an InP substrate; (b) etching away the layers along a plane perpendicular to a (001) plane by wet etching or dry etching (RIE); and (c) growing the core layer and cladding layer of the waveguide by MOCVD. Also claimed are processes for (i) prodn. of an integrated optical semiconductor circuit with an optical device having a hetero-junction structure, formed by an InP cladding layer / an InGaAs active layer / an InP cladding layer and a waveguide; (ii) prodn. of an integrated optical semiconductor circuit with an active optical device and a waveguide; and (iii) prodn. of a buried semiconductor laser diode.
申请公布号
DE4445566(A1)
申请公布日期
1996.06.05
申请号
DE19944445566
申请日期
1994.12.20
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, DAEJEON, KR;KOREA TELECOMMUNICATION AUTHORITY, SEOUL/SOUL, KR