发明名称 |
NON-VOLATILE SIDEWALL MEMORY CELL METHOD OF FABRICATING SAME |
摘要 |
A non-volatile memory cell and array of such cells is provided. The memory cell includes a single transistor floating gate cell fabricated on a sidewall of a silicon pillar etched into a silicon substrate. The memory cells are arranged in an array of rows extending in a bit line direction and columns extending in a word line direction. A substantially smaller cell and array size is realized by limiting the dimension of the pillar and the bit line in the word line direction to be the minimum line width as limited by the lithography. |
申请公布号 |
EP0714554(A1) |
申请公布日期 |
1996.06.05 |
申请号 |
EP19950916816 |
申请日期 |
1995.05.16 |
申请人 |
PHILIPS ELECTRONICS N.V. |
发明人 |
PEIN, HOWARD |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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