A semiconductor device has a substrate bearing a mixt. of a metal (2a) and a semiconductor (2b), the semiconductor being soluble in the metal at below the substrate softening point and heat treatment being carried out to form crystalline laterally extended grains of the semiconductor material in the mixt. Also claimed is a process for prodn. of the above device.
申请公布号
DE4435656(A1)
申请公布日期
1996.06.05
申请号
DE19944435656
申请日期
1994.10.05
申请人
MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN EV, 14195 BERLIN, DE