发明名称 |
Method of manufacturing a BiMOS device |
摘要 |
A method of manufacturing a semiconductor device. A semiconductor substrate is prepared and a gate oxide film is formed on a surface of the semiconductor substrate. The gate oxide film is selectively removed to expose portions of the semiconductor substrate and a first polysilicon layer is formed on a resultant semiconductor structure. Impurities are implanted in the polysilicon layer and a resultant semiconductor structure is annealed to activate the impurities. The first polysilicon layer is patterned to form a base electrode of the bipolar transistor and a source drain electrode of the MOS transistor. An insulating layer is then formed on a resultant semiconductor structure. Portions of the semiconductor substrate are then selectively exposed and a second polysilicon layer is formed on a resultant semiconductor structure. The second polysilicon layer is then patterned to form an emitter electrode of the bipolar transistor.
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申请公布号 |
US5523242(A) |
申请公布日期 |
1996.06.04 |
申请号 |
US19940243919 |
申请日期 |
1994.05.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEDA, TAKEO;MOMOSE, HIROSHI |
分类号 |
H01L21/285;H01L21/331;H01L21/8249;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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