发明名称 Microwave energized ion source for ion implantation
摘要 A microwave energized ion source apparatus is supported by a support tube extending into a cavity defined by a housing assembly and includes a dielectric plasma chamber, a pair of vaporizers, a microwave tuning and transmission assembly and a magnetic field generating assembly. The chamber defines an interior region into which source material and ionizable gas are routed. The chamber is overlied by a cap having an arc slit through which generated ions exit the chamber. The microwave tuning and transmission assembly, which feeds microwave energy to the chamber in the TEM mode, includes a coaxial microwave energy transmission line center conductor. One end of the conductor fits into a recessed portion of the chamber and transmits microwave energy to the chamber. The center conductor extends through an evacuated portion of a coaxial tube surrounding the conductor. A vacuum seal is disposed in or adjacent the coaxial tube and from the boundary between the evacuated coaxial tube and a non-evacuated region. The arc slit cap is secured to a chamber housing surrounding the chamber and is adapted to interfit with a clamping assembly secured to an end of the support tube such that the arc slit is aligned with a predetermined ion beam line. The energy transmission center conductor is coupled to a tuning center conductor which is slideably overlied by a pair of slug tuners. Moving the slug tuners along their paths of travel changes an impedance of the microwave energy input to the chamber.
申请公布号 US5523652(A) 申请公布日期 1996.06.04
申请号 US19940312142 申请日期 1994.09.26
申请人 EATON CORPORATION 发明人 SFERLAZZO, PIERO;ROSE, PETER H.;TRUEIRA, FRANK R.
分类号 C23C14/48;H01J27/18;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J7/24 主分类号 C23C14/48
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