发明名称 |
Plasma processing apparatus using vertical gas inlets one on top of another |
摘要 |
A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.
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申请公布号 |
US5522934(A) |
申请公布日期 |
1996.06.04 |
申请号 |
US19950428363 |
申请日期 |
1995.04.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUZUKI, AKIRA;ISHIZUKA, SHUICHI;KAWAMURA, KOHEI;HATA, JIRO |
分类号 |
C23C16/44;C23C16/455;C23C16/509;H01J37/32;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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