High density memory structure

摘要

A memory cube comprising a plurality of memory chips, each having a plurality of data storage devices, is provided with an auxiliary chip having inactive line termination circuits and the auxiliary chip or chips are formed as part of the memory cube structure and disposed among the memory chips on an interleave basis. The auxiliary circuit chips are provided with external terminals connected to memory input leads, control leads and data write leads, in close proximity to the termination point of the leads. A decoupling capacitor, integrated in the auxiliary circuit chip, is connected to the power bus in the memory cube structure and eliminates extraneous noise problems occurring with discrete capacitors external to the cube. A heating resistor is provided on the auxiliary circuit chip to maintain the cube structure at a near constant temperature. Temperature sensing diodes are incorporated in the auxiliary chip to provide an accurate mechanism for sensing the temperature internal to the cube.