| 发明名称 |
Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film |
| 摘要 |
A semiconductor device having a ferroelectric film or a polycrystalline silicon gate, a humidity-resistant hydrogen barrier film, like TiN film, TiON film, etc., formed by hydrogen non-emission film forming method over the ferroelectric film or the polycrystalline silicon gate.
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| 申请公布号 |
US5523595(A) |
申请公布日期 |
1996.06.04 |
| 申请号 |
US19940238802 |
申请日期 |
1994.05.06 |
| 申请人 |
RAMTRON INTERNATIONAL CORPORATION |
发明人 |
TAKENAKA, KAZUHIRO;FUJISAWA, AKIRA |
| 分类号 |
H01L27/04;H01L21/314;H01L21/318;H01L21/822;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8246;H01L23/29;H01L23/31;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/108;H01L27/115;(IPC1-7):H01L29/68 |
主分类号 |
H01L27/04 |
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