| 发明名称 |
Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode |
| 摘要 |
An ohmic electrode for a p-type III-V compound semiconductor is disclosed. The ohmic electrode formed on a p-type III-V compound semiconductor layer includes nickel (Ni), titanium (Ti), and platinum (Pt) as main components in an interface between the ohmic electrode and the p-type III-V compound semiconductor layer.
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| 申请公布号 |
US5523623(A) |
申请公布日期 |
1996.06.04 |
| 申请号 |
US19950399180 |
申请日期 |
1995.03.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YANAGIHARA, MANABU;TAMURA, AKIYOSHI |
| 分类号 |
H01L21/285;H01L21/331;H01L29/45;H01L29/737;(IPC1-7):H01L29/45 |
主分类号 |
H01L21/285 |
| 代理机构 |
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