| 摘要 |
A method for the fabrication of a liquid crystal display device consisting of a plurality of gates lines and a plurality of data lines and a thin film transistor at each intersection area of gate and data lines includes the steps of: forming a gate electrode and an oxide film on a glass substrate; depositing a gate insulation layer, an active layer and an impurity-doped layer, in sequence; taking off the gate insulation layer at an area connected with an anodized oxide line and then cleaving the gate electrode at the area connected with the anodized oxide line; forming a transparent electrode and then forming a source/drain electrode. An area of the gate electrode which is connected with the anodized oxide line is cleaved for testing, in advance of forming the transparent electrode by a chemical etchant. Accordingly, the chemical etchant used for forming the transparent electrode does not come into direct contact with the gate electrode, preventing damage to the gate electrode.
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