PROCEDIMENTO PER LA REALIZZAZIONE DI CONFIGURAZIONI DI POLISILICIO DROGATO IN TRANSISTORI MOS.,申请号IT1996RM00380-传众专利搜索

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发明名称	PROCEDIMENTO PER LA REALIZZAZIONE DI CONFIGURAZIONI DI POLISILICIO DROGATO IN TRANSISTORI MOS.
摘要
申请公布号	ITRM960380(D0)	申请公布日期	1996.05.31
申请号	IT1996RM00380	申请日期	1996.05.31
申请人		发明人
分类号	H01L29/78;H01L21/027;H01L21/28	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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