| 摘要 |
PURPOSE: To obtain the film which can appropriately be used as a liquid crystal substrate and has excellent gas barrier properties and superior surface smoothness by coating a base material of the film with a polysilazane and subjecting the coated material to heat treatment to form a silicon oxide layer on the base material. CONSTITUTION: This film is obtained by successively laminating a silicon oxide layer 20 and a transparent electrically conductive layer 30 on a transparent high polymer film base material 10. At this time, the silicon oxide layer 20 is formed by coating the base material 10 with a polysilazane solution and subjecting the coated material to heat treatment in the atmosphere or in an oxidizing atmosphere and has a 0.15 to 3μm film thickness. Also, the transparent high polymer film base material 10 has preferably <=20nm retardation due to its optical misotropy and as the base material 10, a material having a somewhat high glass transition temp. and low hygroscopicity is desired and more specifically, polyether sulfone is preferred. Further, as the transparent conductive layer 30, an oxide consisting essentially of indium oxide is preferably used.
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