| 摘要 |
PURPOSE: To correct wiring at high speed and at a high yield without reducing the performance of a device when the wiring is directly corrected in the semiconductor device formed into a hyperfine structure and a multilayer structure. CONSTITUTION: A focused ion beam assist etching for irradiating a focused ion beam 12 in an etching gas atmosphere is used for the cutting of an Al wiring about 1μm wide and the formation of connection holes 13 and 14, which have a bottom of a dimension of 1.5×1.5μm shorter and are 3.5μm deep or deeper, thin films 21 and 22, such as a W thin film, are respectively formed in the holes 13 and 14 by an FIBCVD method to connect with the Al wiring and moreover, metal films, such as an Mo film, are made to deposit on the thin films 21 and 22, such as the W thin film, by a laser CVD method and addition wirings, such as an Mo wiring, are respectively formed between these metal films, such as the Mo film, by the laser CVD method to correct the wiring in a semiconductor device.
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