| 摘要 |
PURPOSE: To obtain a composite semiconductor substrate which prevents a void from being generated between a semiconductor substrate and a glass layer by a method wherein a sootlike substance which is obtained when a raw material composed mainly of a silicon compound is burned in an oxyhydrogen flame and which is composed mainly of SiO2 is deposited on the surface of the semiconductor substrate and a heating treatment is executed substantially in an atmosphere of oxygen gas. CONSTITUTION: A sootlike substance which is obtained when gaseous SiCl4 and gaseous BCl3 are supplied into an oxyhydrogen flame is deposited on the surface of a semiconductor substrate 10 which comprises V-grooves. A support substrate 15 is piled up on a deposit 130 as the sootlike substance, it is heated to 1280 deg.C in an oxygen atmosphere, the sootlike substance is changed into a sintered body 131, the sintered body is volume-contracted down to a thickness of 20μm and made glassy at the same time, and the two substrates 10, 15 are pasted uniformly. A face opposite to the pasted face of the silicon substrate 10 is polished and worked, and a composite semiconductor substrate comprising a mutually insulated and separated semiconductor crystal region 11 can be manufactured at good yield.
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