| 摘要 |
PURPOSE: To improve quality of a semiconductor layer and reduce defectives by mechanically drilling the portions of first connection holes that penetrate a substrate from one side of the substrate and then forming the semiconductor layer on the machined surface with no burr. CONSTITUTION: A plurality of first series connection holes 2 are made in a substrate 1 in one motion from the underside of the substrate 1 using a punch, and a position detection hole is also drilled. A first electrode layer 4 is formed on the surface of the substrate 1, and Ag to be a third electrode layer 5 is formed on the underside by sputtering. Current collecting holes 3 are drilled from the surface of the substrate. Then a thin film semiconductor layer 6 to be a photoelectric conversion layer and a transparent electrode layer 7 to be a second electrode are formed. An upper third electrode layer 51 is formed. This prevents burrs from being formed during machining and thus film quality from being deteriorated, and improves mass-productivity. |
