发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To transmit a power source potential from a first wiring to a second wiring without applying a potential stepped up from the power source potential to a gate electrode. CONSTITUTION: CMOS transistors 23, 24 formed by connecting N-channel transistors 15, 16 to P-channel transistors 21, 22 in parallel are used for transmitting a potential. Thus, when a power source potential Vcc and -Vcc of its inverted potential are applied to the gate electrodes of the transistors 15, 16 and 21, 22, the potential Vcc is transmitted from a wide plate wiring 17 to a local plate wiring 14 without causing drop of a threshold voltage Vth .
申请公布号 JPH08139285(A) 申请公布日期 1996.05.31
申请号 JP19940295542 申请日期 1994.11.04
申请人 SONY CORP 发明人 NAIKI TADAHACHI
分类号 G11C11/22;G11C11/404;G11C14/00;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108 主分类号 G11C11/22
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