| 摘要 |
PURPOSE: To prevent the isolation of an embedded element and the crystalline defect due to the implantation of impurities by forming a groove on a semiconductor substrate with the element on a surface region and embedding a substance having different thermal expansion coefficient from that of the substrate at least in the part of the groove. CONSTITUTION: An embedding material 3 having different thermal expansion coefficient from that of a semiconductor substrate 1 is embedded in the first groove 2 of the substrate 1, and a stress is generated in the groove 2. A semiconductor layer 4 to become an element forming region is formed on the substrate 1, and two element forming regions are electrically isolated by a second groove 5 and an embedding material 6. The material 3 in the groove 2 may have either tensile or compressive stress. When a crystalline defect is generated in the deep part of the substrate 1 in advance by he large stress, the stress is alleviated later, and a distortion is reduced. Thus, the defect by the stress is almost eliminated in the layer 4 formed newly at the upper part, and a junction leakage current can be reduced. |
