| 发明名称 |
Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride. |
| 摘要 |
<p>A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.</p> |
| 申请公布号 |
GR3018958(T3) |
申请公布日期 |
1996.05.31 |
| 申请号 |
GR19960400359T |
申请日期 |
1996.02.14 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIKOSHIBA, NOBUO;TSUBOUCHI, KAZUO;MASU, KAZUYA |
| 分类号 |
C23C16/42;H01L21/285;(IPC1-7):C23C16/42 |
主分类号 |
C23C16/42 |
| 代理机构 |
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代理人 |
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| 地址 |
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