| 摘要 |
<p>PURPOSE: To form a projection in which the area of a tip brought into contact with a wafer is small by applying sand blast work to the surface of a flat plate-like ceramic substrate to which a mask material is applied in the projection forming place and after that, applying brush-polished processing to the projection forming part with use of a brush to which abraisive grains are made to adhere. CONSTITUTION: Immediately after sand blast work, the sand blast work is performed so that an angleαbetween a surface to which a mask material is applied and the side surface of a projection 11a formed by the sand blast work becomes relatively large angle of 70 deg. to 80 deg.. Next, a brush-polished processing is applied thereto, thereby polishing mainly the upper part of the projection 11a to form a curved surface in the upper end part and at the same time the upper part of a projection 11b is thinned. Thereby, a projection having a shape which is hard to break can be formed.</p> |
