发明名称 EXCHANGE COUPLING FILM AND MAGNETORESISTANCE EFFECT ELEMENT
摘要 PURPOSE: To obtain an exchange coupling film which is possessed of a large exchange bias magnetic field and improved in thermal stability by a method wherein a first anti-ferromagnetic film is of tetragonal system, body-centered cubic system, and NaCl system in crystal structure, and a second anti- ferromagnetic film is of face-centered cubic system in crystal structure. CONSTITUTION: A second anti-ferromagnetic film 3 is formed at an interface between a first anti-ferromagnetic film 4 and a ferromagnetic film 2 through an RF magnetron sputtering device for the formation of an exchange coupling film. The exchange coupling film is formed on a board 1 of glass, wherein the ferromagnetic film 2 whose composition is represented by a formula, Co90 Fe10 (90at% Co-10at% Fe), is formed as thick as 10nm or so, and the first anti-ferromagnetic film 4 which is of cubic system in crystal structure, represented by a formula, Ni50 Mn50 , in composition, and formed as thick as 3 to 50nm. The second anti-ferromagnetic film 3 which is of face-centered cubic system, represented by a formula,γ-Fe50 Mn50 , in composition, and formed as thick as 0 to 5nm is formed at the interface between the first anti-ferromagnetic film 4 and the ferromagnetic film 2.
申请公布号 JPH08138935(A) 申请公布日期 1996.05.31
申请号 JP19950235244 申请日期 1995.09.13
申请人 TOSHIBA CORP 发明人 HASHIMOTO SUSUMU;KAMIGUCHI YUZO;FUKUYA HIROMI;IWASAKI HITOSHI;FUNAYAMA TOMOKI;SAHASHI MASASHI
分类号 C23C14/06;C22C38/00;G11B5/39;H01F10/08;H01F10/16;H01F10/30;H01F10/32;H01L43/08;(IPC1-7):H01F10/16 主分类号 C23C14/06
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