发明名称 EXPOSURE BASE, EXPOSURE MASK, AND MANUFACTURE OF EXPOSURE BASE
摘要 <p>PURPOSE: To provide an exposure base which can provide a uniform phase difference and uniform transmittance within its surface, an exposure mask, and a method for manufacturing the exposure base by adjusting the complex index of refraction the element composition ratio of a semitransparent film according to the thickness of the semitransparent film. CONSTITUTION: In an exposure base comprising a translucent base 41 on which is a semitransparent film 42 having the desired phase difference to the base 41 and the desired transmittance, the complex index of refraction or the element composition ratio of the semitransparent film 42 is adjusted to match the thickness of the semitransparent film 42. Adjustment of the complex index of refraction of the film is performed in such a way that during film formation a distribution of reactive gas in a film forming device is provided to correspond to the speed of film formation. Adjustment of the element composition ratio of the film is achieved by performing it during film formation in such a way as to correspond to the thickness of the film being formed. Thus the complex index of refraction of the semitransparent film 42 is adjusted by adjustment of the composition ratio to correspond to a difference in thickness of the semitransparent film 42, so that a uniform phase difference and uniform intensity transmittance can be obtained within the surface of the base 41.</p>
申请公布号 JPH08137094(A) 申请公布日期 1996.05.31
申请号 JP19940273980 申请日期 1994.11.08
申请人 TOSHIBA CORP 发明人 ITO SHINICHI;KAWANO KENJI;IWAMATSU TAKAYUKI
分类号 G03F1/32;G03F1/60;G03F1/68;H01L21/027;(IPC1-7):G03F1/14;G03F1/08 主分类号 G03F1/32
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