| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: To obtain a thin film transistor having characteristics equivalent to those of a transistor using a single crystal wafer. CONSTITUTION: A silicide layer 105 is formed by applying solvent containing metal element which promotes crystallization of silicon, to an amorphous silicon film 103, and performing heat treatment. Regions 106 and 107 which turn to nucleuses of crystal growth are formed by patterning. Crystal growth which uses the layers 106 and 107 as crystal nucleuses and is shown by 108 and 109 is performed by irradiating the wafer with a laser beam in a heated state. Thereby monodomain regions 109 and 111 which can be regarded as single crystal are obtained. |
| 申请公布号 |
JPH08139019(A) |
申请公布日期 |
1996.05.31 |
| 申请号 |
JP19950132900 |
申请日期 |
1995.05.06 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KUSUMOTO NAOTO;TERAMOTO SATOSHI |
| 分类号 |
G02F1/1362;H01L21/02;H01L21/20;H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/20;H01L21/268 |
主分类号 |
G02F1/1362 |
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