| 摘要 |
PURPOSE: To provide a method for forming the photosensitive film of a semiconductor that can accurately form the photosensitive film with desired dimensions also on a layer with a large degree of flex by preventing a cut-out machining phenomenon that is generated when forming a single-layer photosensitive film. CONSTITUTION: A photosensitive film 13 is applied to the surface of an uppermost layer 12 on a substrate 11, and a recessed part is formed on the photosensitive film 13, an inorganic layer 16 is formed at a recessed part, and an inorganic layer 16 is utilized for a mask, and the photosensitive film 13 is eliminated and an uppermost layer is etched. |
