| 摘要 |
PURPOSE: To carry out processing with high precision and efficiency. CONSTITUTION: A plasma treatment apparatus is provided with a plasma measuring apparatus which is provided with a plurality of open parts with 1μm open diameter or narrower in a susceptor 103 to put a substrate 107 in a vacuum tank 101, an aperture 0.5μm thick or larger, and a means to detect current which passes the aperture. Parameters of the apparatus are made possible to be controlled based on measured electric current value through a computer 109 in which correlations of electric current values, set values of a high frequency power source to control high frequency wave output, a mass flow controller III to control the flow rate of a process gas, and an evacuating apparatus 113 to control the gas pressure, which are apparatus parameters, and ion current are stored. Consequently, at least one chemical species such as current, ion energy, and energy of electrons from plasma to be utilized for etching can be directly measured in the same condition as that of a position where processing is carried out.
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